- 您现在的位置：买卖IC网 > Sheet目录513 > SI7456DP-T1-GE3 (Vishay Siliconix)MOSFET N-CH 100V 5.7A PPAK 8SOIC
Si7456DP
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
2
4
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 100 V, V GS = 0 V
V DS = 100 V, V GS = 0 V, T J = 85 °C
V DS ≥ 5 V, V GS = 10 V
40
± 100
1
20
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 9.3 A
V GS = 6.0 V, I D = 8.8 A
V DS = 15 V, I D = 9.3 A
0.021
0.023
35
0.025
0.028
Ω
S
Diode Forward Voltage
a
V SD
I S = 4.3 A, V GS = 0 V
0.8
1.2
V
Dynamic b
Total Gate Charge
Q g
36
44
Gate-Source Charge
Gate-Drain Charge
Q gs
Q gd
V DS = 50 V, V GS = 10 V, I D = 9.3 A
10
8.6
nC
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
R g
t d(on)
t r
t d(off)
t f
t rr
V DD = 50 V, R L = 50 Ω
I D ? 1.0 A, V GEN = 10 V, R g = 6 Ω
I F = 4.3 A, dI/dt = 100 A/μs
0.5
1.27
20
10
46
26
50
2.1
40
20
90
50
80
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
V GS = 10 V thru 6 V
40
32
24
5V
32
24
16
8
16
8
T C = 125 °C
25 °C
0
4V
0
- 55 °C
0
1
2
3
4
5
0
1
2
3
4
5
6
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 71603
S09-0271-Rev. F, 16-Feb-09
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SI7457DP-T1-GE3
MOSFET P-CH D-S 100V PPAK 8SOIC
SI7460DP-T1-GE3
MOSFET N-CH 60V 11A PPAK 8SOIC
SI7461DP-T1-GE3
MOSFET P-CH 60V 8.6A PPAK 8SOIC
SI7462DP-T1-GE3
MOSFET N-CH D-S 200V 8-SOIC
SI7465DP-T1-GE3
MOSFET P-CH 60V 3.2A PPAK 8SOIC
SI7530DP-T1-GE3
MOSFET N/P-CH 60V PWRPAK 8-SOIC
SI7620DN-T1-GE3
MOSFET N-CH 150V 13A 1212-8
SI7625DN-T1-GE3
MOSFET P-CH D-S 30V 1212-8 PPAK
相关代理商/技术参数
SI7456DP-TI-GE3
制造商:Vishay Siliconix 功能描述:MOSFET N SO-8 制造商:Vishay Siliconix 功能描述:MOSFET, N, SO-8 制造商:Vishay Siliconix 功能描述:MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):8.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:1.9W ;RoHS Compliant: Yes
SI7457DP-T1-E3
功能描述:MOSFET 100V 28A 83W 42mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7457DP-T1-GE3
功能描述:MOSFET 100V 28A 83W 42mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7458DP
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) Fast Switching MOSFET
SI7459DP-T1
制造商:Vishay Intertechnologies 功能描述:P-Ch PowerPAK SO-8 30V 6.8mohm@10V
SI7459DPT1E3
制造商:VISHAY 功能描述:Pb Free
SI7459DP-T1-E3
功能描述:MOSFET 30V 22A 5.4W 6.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7459DP-T1-GE3
功能描述:MOSFET 30V 22A 5.4W 6.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube